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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1361 DESCRIPTION *With TO-3PFa package *Complement to type 2SD2052 *High transition frequency *Wide area of safe operation APPLICATIONS *For high power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -9 -15 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-7A ;IB=-0.7A IC=-7A ; VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V;f=1MHz 20 60 20 MIN 2SB1361 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V A A 200 270 15 pF MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1361 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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